http://www.cieonline.co.uk/cie2/articlen.asp?pid=1486&id=15805
The key to achieving the significant increase in speed and reduction in power consumption offered by ZRAM Gen2 bit cells can be seen in the diagram. Invented by ISis chief scientist and co-founder, Dr Serguei Okhonin, ZRAM Gen2 stores significantly more charge in the memory bit cell than was previously possible. The additional charge provides an order-of-magnitude improvement in both cell margin the difference between a 1 and a 0 and in bit cell data retention time.
The data in the diagram shown was taken as a direct reading from a test device, rather than a simulation, and shows an almost digital response for Gen2. The higher charge margin provides much faster data read and write times more than double the speed of previous ZRAM devices yet because retention time is also lengthened, fewer refreshes are necessary. So the power consumption is also significantly reduced by 75% in the case of memory read power, and by a massive 90% when writing to the memory. As a result, ZRAM Gen2 significantly broadens the range of applications that can take advantage of ZRAMs density to both high-performance applications requiring greater than 1GHz operation (when pipelined), and low-power applications that require long-battery life.